SI1032X-T1-GE3
RoHS

SI1032X-T1-GE3

SI1032X-T1-GE3

Vishay

MOSFET N-CH 20V 200MA SC89-3

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SI1032X-T1-GE3

Availability: 17851
Pricing
Quantity UNIT PRICE EXT PRICE
1 0.4558$ 0.46 $
10 0.4467$ 4.47 $
100 0.433$ 43.3 $
1000 0.4193$ 419.3 $
10000 0.4011$ 4011 $
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Products Specifications
RoHSCompliant
MountSurface Mount
Width950 µm
Height800 µm
Length1.7 mm
Weight29.993795 mg
Fall Time25 ns
Lead FreeLead Free
PackagingDigi-Reel®
Rise Time25 ns
REACH SVHCUnknown
Rds On Max5 Ω
Resistance5 Ω
Case/PackageSC
Number of Pins3
Power Dissipation300 mW
Threshold Voltage700 mV
Number of Channels1
Number of Elements1
Turn-On Delay Time50 ns
Radiation HardeningNo
Turn-Off Delay Time50 ns
Element ConfigurationSingle
Max Power Dissipation300 mW
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance5 Ω
Gate to Source Voltage (Vgs)6 V
Continuous Drain Current (ID)200 mA
Drain to Source Voltage (Vdss)20 V